Onset of blistering in hydrogen-implanted silicon

L. J. Huang, Q. Y. Tong, Y. L. Chao, T. H. Lee, T. Martini, U. Gösele

研究成果: 雜誌貢獻期刊論文同行評審

57 引文 斯高帕斯(Scopus)

摘要

The onset of surface blistering in hydrogen-implanted single crystalline silicon was studied. A combination of atomic force microscopy and optical measurements shows that hydrogen-containing platelets grow laterally below silicon surface until they suddenly pop up as surface blisters due to the internal hydrogen pressure after a critical size has been reached. Experimentally and theoretically, the critical size of the onset blisters was found to increase with increasing implantation depth or top layer thickness.

原文???core.languages.en_GB???
頁(從 - 到)982-984
頁數3
期刊Applied Physics Letters
74
發行號7
DOIs
出版狀態已出版 - 15 2月 1999

指紋

深入研究「Onset of blistering in hydrogen-implanted silicon」主題。共同形成了獨特的指紋。

引用此