摘要
A single - sided silicon detector with AC-coupling capacitors and polysilicon bias resistors has been designed and fabricated. The proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual Si02 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formation were employed to produce detectors with self-moisture - protection, free from effect of pin-holes and with-high breakdown voltage capacitors. We are performed a series of study to understand the characteristics of the detector. The lowest detector leakage current is about lOOnA/cm2 at 100 Volts. The breakdown voltage was within 160-200Volts for the ONO layer. In which we didn't find any pin - hole out of 384 samples. According to the beam-test vesults at CERN in 1992 and 1993, an average S/N ratio of 30 and a best spatial resolution of 3.5±0.5um with an efficiency close to 100% were obtained for the ONO-SMD.
原文 | ???core.languages.en_GB??? |
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DOIs | |
出版狀態 | 已出版 - 1994 |
事件 | 1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan 持續時間: 12 7月 1994 → 15 7月 1994 |
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???event.eventtypes.event.conference??? | 1994 International Electron Devices and Materials Symposium, EDMS 1994 |
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國家/地區 | Taiwan |
城市 | Hsinchu |
期間 | 12/07/94 → 15/07/94 |