ONO SMD - A silicon microstrip detector with ONO A-C coupled capacitor

Wen Chin Tsay, Jyh Wong Hong, A. Chen, Willis T. Lin, Hsien Ten Ting, Song Tsang Chiang, Ching Lan Yen

研究成果: 會議貢獻類型會議論文同行評審

摘要

A single - sided silicon detector with AC-coupling capacitors and polysilicon bias resistors has been designed and fabricated. The proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual Si02 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formation were employed to produce detectors with self-moisture - protection, free from effect of pin-holes and with-high breakdown voltage capacitors. We are performed a series of study to understand the characteristics of the detector. The lowest detector leakage current is about lOOnA/cm2 at 100 Volts. The breakdown voltage was within 160-200Volts for the ONO layer. In which we didn't find any pin - hole out of 384 samples. According to the beam-test vesults at CERN in 1992 and 1993, an average S/N ratio of 30 and a best spatial resolution of 3.5±0.5um with an efficiency close to 100% were obtained for the ONO-SMD.

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DOIs
出版狀態已出版 - 1994
事件1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
持續時間: 12 7月 199415 7月 1994

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???event.eventtypes.event.conference???1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區Taiwan
城市Hsinchu
期間12/07/9415/07/94

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