One-step formation of atomic-layered transistor by selective fluorination of graphene film

Kuan I. Ho, Jia Hong Liao, Chi Hsien Huang, Chang Lung Hsu, Lain Jong Li, Chao Sung Lai, Ching Yuan Su

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, the wafer scale fabrication of atomic layered transistors are demonstrated by selective fluorination of graphene with a remote CF4 plasma, where the generated F-radicals preferentially fluorinated graphene surface at low temperature (<200°C) while this technique suppress the defect formation by screening out the ion damage effect. The resultant grapehene shows electrical semiconducting and isolation after subjected to the fluorination for 5∼20min, respectively. A back-gate transistor is then fabricated with a one-step fluorination of graphene film on Si02 substrate. The chemical structure, C-F bonds, is well correlated to the electrical properties in fluorinated graphene by XPS, Raman spectroscopy and electrical meter. This efficient method provide electrical semiconducting and insulator of graphene with a large area and selective pattering, where it turns out the potential for the integration of electronics down to atomic layered scale.

原文???core.languages.en_GB???
主出版物標題Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
頁面326-328
頁數3
DOIs
出版狀態已出版 - 2013
事件2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
持續時間: 2 1月 20134 1月 2013

出版系列

名字Proceedings - Winter Simulation Conference
ISSN(列印)0891-7736

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???event.eventtypes.event.conference???2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
國家/地區Singapore
城市Singapore
期間2/01/134/01/13

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