On indium segregation in InGaN/GaN quantum well structures

C. C. Yang, Shih Wei Feng, Yen Sheng Lin, Yung Chen Cheng, Chin Yi Tsai, Kung Jeng Ma, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Indium segregation in InGaN is a crucial phenomenon controlling the optical characteristics of such a compound. Its formation is a natural process due to the large lattice mismatch between InN and GaN. In InGaN, indium compositional fluctuations and phase separated InN clusters can be observed, particularly when the nominal indium content is high. In this paper, we report the results of material characterization, including X-ray diffraction, high-resolution transmission electron microscopy, atomic force microscopy, etc., and optical studies, including photo-luminescence (PL) and stimulated emission (SE). In material characterization, we observed clear indium aggregation and phase separation. Such indium composition variations become more prominent as the nominal indium content increases. Disk-shape features with dimensions of a few nm by a few tens nm near the quantum well regions could be clearly seen. Regarding optical studies, the widely observed Sshape PL peak position variations with temperature were observed and from which the localization energy values of the localized states were calibrated. Also, the side-peak feature of PL spectrum was attributed to the phonon-replica transition. Such a transition could become quite prominent in a sample with high nominal indium content. In the stimulated emission study, the most prominent feature observed was the two-peak distribution of SE spectrum. These two peaks were supposed to originate from the recombination of localized and free carriers, respectively.

原文???core.languages.en_GB???
頁(從 - 到)20-26
頁數7
期刊Proceedings of SPIE - The International Society for Optical Engineering
4280
DOIs
出版狀態已出版 - 2001

指紋

深入研究「On indium segregation in InGaN/GaN quantum well structures」主題。共同形成了獨特的指紋。

引用此