Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Engineering

• Melting Temperature 100%
• Oxygen Content 100%
• Numerical Study 100%
• Single Crystal Growth 100%
• Silicon Single Crystal 100%
• Heater Power 100%
• Electric Power Utilization 50%
• Bottom Wall 50%
• Good Choice 50%
• Power Control 50%
• Crystal Quality 50%
• Ratio of Power 50%
• Feeding Zone 50%

Keyphrases

• Czochralski Silicon 100%
• Double-sided 100%
• Heater 100%
• Cz Silicon Single Crystal Growth 100%
• Melting Temperature 33%
• Oxygen Content 33%
• Czochralski Growth 33%
• Single-side 33%
• Heater Power 33%
• Interface Deflection 33%
• Power Consumption 16%
• Flow Transport 16%
• Crystal Quality 16%
• Oxygen Transport 16%
• Crystal-melt Interface 16%
• Power Ratio 16%
• Heat Flow 16%
• Power Control 16%
• Silicon Crystal 16%
• Heat Transport 16%
• Wall Temperature 16%
• Pulling Velocity 16%
• Feeding Zone 16%

Material Science

• Silicon 100%
• Crystal Growth From Melt 100%
• Single Crystal Growth 100%