摘要
A numerical simulation has been performed to determine the concentration of oxygen and carbon in a Si melt during the mc-Si ingot growth process under the influence of a gas guidance device. With the application of this gas guidance device, the gas velocity above the free surface may increase, followed by a decrease in the SiO and CO concentrations flux at the free surface. As a consequence oxygen and carbon concentrations in the melt may decrease. The effectiveness of the gas flow guidance device mainly depends on the gap between it and the free surface. A lower oxygen concentration in the melt may be obtained with a smaller gap. On the other hand, the carbon concentration in the melt also decreases as the gap decreases until the gap reaches a certain small value, after which it increases.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1-8 |
頁數 | 8 |
期刊 | Journal of Crystal Growth |
卷 | 385 |
DOIs | |
出版狀態 | 已出版 - 2014 |