Numerical simulation of heat and mass transfer during Czochralski silicon crystal growth under the application of crystal-crucible counter- and iso-rotations

Thi Hoai Thu Nguyen, Jyh Chen Chen, Chieh Hu, Chun Hung Chen

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this study, the effects of different rotational combinations between the crystal and the crucible on the flow, heat and mass transfer in the melt are discussed based on numerical simulations. Both crystal-crucible counter- and iso-rotations are investigated. The simulation results for the growth of crystal 200 mm in length show that the oxygen concentration along the crystal-melt interface is determined by competition between the mechanisms of convection and diffusion. When the differences in rotation between the crystal and crucible are low during iso-rotation, the melt velocity is significantly weakened and the effect of the diffusion process on oxygen transport in the melt becomes stronger than the effect of convection. The melt flow is more sensitive to changes in the crystal rotation rate. The distribution of oxygen atoms and the temperature of the melt are more significantly affected by the flow pattern in cases of counter-rotation than iso-rotation. Moreover, it is found that a flow transition occurs in the silicon melt when the crystal and crucible have the same iso-rotation rate (ReS/ReC = 0.5842). A lower concentration and more uniform radial distribution of oxygen can be obtained by using the iso-rotation conditions. Rotating the crystal and crucible in the same direction also produces a flatter defect transition with lowering and flattening of the growth parameters Vcr/Gc along the crystal-melt interface.

原文???core.languages.en_GB???
頁(從 - 到)50-57
頁數8
期刊Journal of Crystal Growth
507
DOIs
出版狀態已出版 - 1 2月 2019

指紋

深入研究「Numerical simulation of heat and mass transfer during Czochralski silicon crystal growth under the application of crystal-crucible counter- and iso-rotations」主題。共同形成了獨特的指紋。

引用此