@inproceedings{1df1bce25aeb4cb981aa3959c44a28d5,
title = "N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development",
abstract = "In this work, N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development are presented. Highly doped N+-InGaAs cap layers are used to decrease the parasitic resistances in contact and access regions. As-grown modulation-doped epitaxy materials exhibit a Hall mobility of 14,200 cm2/V s and a sheet density of 6.15 × 1012 cm -2, while a mobility of 14,600 cm2/V s and a sheet density of 5.61×1012 cm-2 are shown after removal of the N+-InGaAs cap. Benefiting the energy band lowering using the highly doped cap layers, a low contact resistance of 0.06 Ω-mm is achieved. DC performances of IDSS=862mA/mm and gm,peak=927mS/mm and RF performances of fT=24GHz and fmax=51GHz are demonstrated in a 2.1μm-gate-length device. An fT-Lg product is as high as 51 GH-μm.",
keywords = "HFET, InAs, Recessed gate",
author = "He, {Wei Zhi} and Lin, {Heng Kuang} and Chiu, {Pei Chin} and Chyi, {Jen Inn} and Ko, {Chih Hsin} and Kuan, {Ta Ming} and Hsieh, {Meng Kuei} and Lee, {Wen Chin} and Wann, {Clement H.}",
year = "2010",
doi = "10.1109/ICIPRM.2010.5516406",
language = "???core.languages.en_GB???",
isbn = "9781424459209",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "329--332",
booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",
note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",
}