Novel In0.29Al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

Ming Ta Yang; Yi Jen Chan; Chia Song Wu; Jen Inn Chyi

Novel In_0.29Al_0.71As/In_0.3Ga_0.7As heterostructure field-effect transistors fabricated on GaAs substrates

Ming Ta Yang, Yi Jen Chan, Chia Song Wu, Jen Inn Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

In_0.29Al_0.71As/In_0.3Ga_0.7As heterostructure Field-Effect Transistors (HFETs), including both HEMTs and DCFETs, fabricated on GaAs substrates were evaluated by DC and microwave characterization. A peak extrinsic DC transconductance (g_m) of 230 mS/mm and a saturation current density of 385 mA/mm were obtained from HEMT device with a 0.6 μm-long gate. This device also showed a current-gain cut-off frequency (f_T) of 23 GHz and a maximum available gain cut-off frequency (f_max) of 73 GHz. As to the DCFETs, a g_m of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 μm-long gate device. An f_T of 22 GHz and an f_max of 51 GHz were obtained. Equivalent circuit models based on microwave testing results were also simulated for future applications on microwave amplifier designs.

原文	???core.languages.en_GB???
頁（從 - 到）	29-36
頁數	8
期刊	Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
卷	2
發行號	1
出版狀態	已出版 - 2月 1995

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@article{8041078f92ae431bb11d58c2c061a735,

title = "Novel In0.29Al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates",

abstract = "In0.29Al0.71As/In0.3Ga0.7As heterostructure Field-Effect Transistors (HFETs), including both HEMTs and DCFETs, fabricated on GaAs substrates were evaluated by DC and microwave characterization. A peak extrinsic DC transconductance (gm) of 230 mS/mm and a saturation current density of 385 mA/mm were obtained from HEMT device with a 0.6 μm-long gate. This device also showed a current-gain cut-off frequency (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. As to the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 μm-long gate device. An fT of 22 GHz and an fmax of 51 GHz were obtained. Equivalent circuit models based on microwave testing results were also simulated for future applications on microwave amplifier designs.",

author = "Yang, {Ming Ta} and Chan, {Yi Jen} and Wu, {Chia Song} and Chyi, {Jen Inn}",

year = "1995",

month = feb,

language = "???core.languages.en_GB???",

volume = "2",

pages = "29--36",

journal = "Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an",

issn = "1023-4462",

number = "1",

}

Novel In_0.29Al_0.71As/In_0.3Ga_0.7As heterostructure field-effect transistors fabricated on GaAs substrates. / Yang, Ming Ta; Chan, Yi Jen; Wu, Chia Song 等.
於: Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, 卷 2, 編號 1, 02.1995, p. 29-36.

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

TY - JOUR

T1 - Novel In0.29Al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

AU - Yang, Ming Ta

AU - Chan, Yi Jen

AU - Wu, Chia Song

AU - Chyi, Jen Inn

PY - 1995/2

Y1 - 1995/2

N2 - In0.29Al0.71As/In0.3Ga0.7As heterostructure Field-Effect Transistors (HFETs), including both HEMTs and DCFETs, fabricated on GaAs substrates were evaluated by DC and microwave characterization. A peak extrinsic DC transconductance (gm) of 230 mS/mm and a saturation current density of 385 mA/mm were obtained from HEMT device with a 0.6 μm-long gate. This device also showed a current-gain cut-off frequency (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. As to the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 μm-long gate device. An fT of 22 GHz and an fmax of 51 GHz were obtained. Equivalent circuit models based on microwave testing results were also simulated for future applications on microwave amplifier designs.

AB - In0.29Al0.71As/In0.3Ga0.7As heterostructure Field-Effect Transistors (HFETs), including both HEMTs and DCFETs, fabricated on GaAs substrates were evaluated by DC and microwave characterization. A peak extrinsic DC transconductance (gm) of 230 mS/mm and a saturation current density of 385 mA/mm were obtained from HEMT device with a 0.6 μm-long gate. This device also showed a current-gain cut-off frequency (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. As to the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 μm-long gate device. An fT of 22 GHz and an fmax of 51 GHz were obtained. Equivalent circuit models based on microwave testing results were also simulated for future applications on microwave amplifier designs.

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M3 - 期刊論文

AN - SCOPUS:0029241781

SN - 1023-4462

VL - 2

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EP - 36

JO - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an

JF - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an

IS - 1

ER -

Novel In0.29Al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

摘要

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引用此

Novel In_0.29Al_0.71As/In_0.3Ga_0.7As heterostructure field-effect transistors fabricated on GaAs substrates