Novel concept of hardware security in using gate-switching FinFET nonvolatile memory to implement true-random-number generator

W. Y. Yang, B. Y. Chen, C. C. Chuang, E. R. Hsieh, K. S. Li, Steve S. Chung

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

For the first time, we use a gate-switching resistance memory to implement the TRNG (True random number generator). First, a resistance memory was built on a FinFET platform, named RG-FinFET(resistive-gate) RRAM which was simply an MIM(metal-insulator-metal) integrated on top of the FinFET gate. It performed as a novolatile memory (NVM) which used resistance switching to distinguish 0 and 1 states through the drain current of the FinFET. The experimental results show that RG-FinFET exhibits high SET speed of 50ns at 3.4V/RESET speed of 10ns at 2.4V, read time as small as 16ns at 1.1V. Furthermore, excellent 107 cycles endurance and data-retention under 125°C for over one month can be achieved. The array-level performance is also analyzed, showing well disturbance-immune during SET, RESET and read. Secondly, a TRNG was developed based on the drain current variation of RG-FinFET. In terms of the security, this TRNG exhibits ideal un-biased normal distribution of hamming distance, and narrow distribution of hamming weight. Moreover, we introduced the concept of XNOR-enhanced operation to TRNG at high temperature to enhance its uniformity. In NIST test, this TRNG passed all items. More importantly, this work is ready for an embedded FinFET technology to develop TRNG with full logic CMOS compatibility.

原文???core.languages.en_GB???
主出版物標題2020 IEEE International Electron Devices Meeting, IEDM 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面39.3.1-39.3.4
ISBN(電子)9781728188881
DOIs
出版狀態已出版 - 12 12月 2020
事件66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
持續時間: 12 12月 202018 12月 2020

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2020-December
ISSN(列印)0163-1918

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???event.eventtypes.event.conference???66th Annual IEEE International Electron Devices Meeting, IEDM 2020
國家/地區United States
城市Virtual, San Francisco
期間12/12/2018/12/20

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