@article{0782aecb78eb4a0fa1db25f30c49d416,
title = "Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors Around 1.3-μm Telecommunication Wavelength",
abstract = "We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to {"}hot electron{"} effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.",
keywords = "Bandwidth saturation, Metal-semiconductor-metal (MSM) devices, Photodetector, Traveling wave devices",
author = "Shi, {Jin Wei} and Chen, {Yen Hung} and Gan, {Kian Giap} and Chiu, {Yi Jen} and Bowers, {John E.} and Tien, {Ming Chun} and Liu, {Tzu Ming} and Sun, {Chi Kuang}",
note = "Funding Information: Manuscript received April 28, 2003; revised July 18, 2003. This work was supported by the National Science Council and Institute of Applied Science and Engineering Research, Academia Sinica, Taiwan, R.O.C.",
year = "2004",
month = jan,
doi = "10.1109/LPT.2003.819418",
language = "???core.languages.en_GB???",
volume = "16",
pages = "242--244",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
number = "1",
}