@article{c7dc68333f2c4041b206b3075c61f3b7,
title = "Nitride-based concentrator solar cells grown on Si substrates",
abstract = "InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.",
keywords = "Concentrator, GaN, InGaN, Si substrates",
author = "Liu, {C. Y.} and Lai, {C. C.} and Liao, {J. H.} and Cheng, {L. C.} and Liu, {H. H.} and Chang, {C. C.} and Lee, {G. Y.} and Chyi, {J. I.} and Yeh, {L. K.} and He, {J. H.} and Chung, {T. Y.} and Huang, {L. C.} and Lai, {K. Y.}",
note = "Funding Information: The research was supported by National Central University's Plan to Develop First-class Universities, Top-level Research Centers Grants 102G903-2 , and National Science Council Grants NSC-102–3113-E-008-001 and NSC-100–2218-E-008–015 . ",
year = "2013",
doi = "10.1016/j.solmat.2013.05.017",
language = "???core.languages.en_GB???",
volume = "117",
pages = "54--58",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
}
