@article{e0ccbda654d84e8489bfe0f7d6227ff0,
title = "Nickel Schottky junction on epi-Ge for strained Ge metal-oxide- semiconductor field-effect transistors source/drain engineering",
abstract = "In this study, the nano-scale epi-Ge/Si fabrication and the Schottky junction source/drain manufacture with Ni incorporation are demonstrated. The Ni Schottky junction formation by laser annealing (LA) and rapid thermal annealing, as well as the barrier height and interface characteristics, are discussed. Improvement in the density of interface trap (D it) can be achieved by LA; this technology enhances the opportunity of high Ge concentration SiGe channel to play a part in the next-generation complementary metal-oxide-semiconductor applications.",
keywords = "Barrier, Interface, Schottky, SiGe",
author = "Lee, {M. H.} and Hsieh, {B. F.} and Chang, {S. T.} and Lee, {S. W.}",
note = "Funding Information: The authors are grateful for the UHVCVD support for Prof. C. W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, and the funding supporting by National Science Council ( NSC 98-2221-E-003-020-MY3 ), and National Taiwan Normal University ( NTNU100-D-01 ), Taiwan.",
year = "2012",
month = feb,
day = "1",
doi = "10.1016/j.tsf.2011.10.083",
language = "???core.languages.en_GB???",
volume = "520",
pages = "3379--3381",
journal = "Thin Solid Films",
issn = "0040-6090",
number = "8",
}