New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices
E. R. Hsieh, Steve S. Chung, J. C. Wang, C. S. Lai, C. H. Tsai, R. M. Huang, C. T. Tsai, C. W. Liang
研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審