@inproceedings{86a08e1d9b794b2ea4ca5e5dca04bb12,
title = "New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices",
abstract = "In this paper, we have studied the I d variation in linear and saturation region by considering the strain-induced effect and the carrier transport of strained CMOS devices. It was found that the origin of linear I d variation comes from the mobility scattering; while in saturation region, the I d variation is dominated by the injection velocity. The higher the injection velocity is, the smaller the saturation I d variation becomes. These results provide us a guideline for achieving good variability control of strain-based CMOS technologies.",
author = "Hsieh, {E. R.} and Chung, {Steve S.} and Wang, {J. C.} and Lai, {C. S.} and Tsai, {C. H.} and Huang, {R. M.} and Tsai, {C. T.} and Liang, {C. W.}",
year = "2012",
doi = "10.1109/VLSI-TSA.2012.6210148",
language = "???core.languages.en_GB???",
isbn = "9781457720840",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
booktitle = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers",
note = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 ; Conference date: 23-04-2012 Through 25-04-2012",
}