New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices

E. R. Hsieh, Steve S. Chung, J. C. Wang, C. S. Lai, C. H. Tsai, R. M. Huang, C. T. Tsai, C. W. Liang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

In this paper, we have studied the I d variation in linear and saturation region by considering the strain-induced effect and the carrier transport of strained CMOS devices. It was found that the origin of linear I d variation comes from the mobility scattering; while in saturation region, the I d variation is dominated by the injection velocity. The higher the injection velocity is, the smaller the saturation I d variation becomes. These results provide us a guideline for achieving good variability control of strain-based CMOS technologies.

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主出版物標題2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs
出版狀態已出版 - 2012
事件2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan
持續時間: 23 4月 201225 4月 2012

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN(列印)1930-8868

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???event.eventtypes.event.conference???2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
國家/地區Taiwan
城市Hsinchu
期間23/04/1225/04/12

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