Nanothick layer transfer of hydrogen-implanted wafer using polysilicon sacrificial layer

C. H. Huang, C. L. Chang, Y. Y. Yang, T. Suryasindhu, W. C. Liao, Y. H. Su, P. W. Li, C. Y. Liu, C. S. Lai, J. H. Ting, C. S. Chu, C. S. Lee, T. H. Lee

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

A fabrication method of 2-D nanostructure materials applied for forming nanothick SOI materials without using post-thinning processes is presented in this paper. The thickness of SOI layer is precisely controlled by a polysilicon layer as a sacrificial layer in the implantation step to acquire a desirable implant depth. Polysilicon layer was initially deposited on the thermal oxidized surface of silicon wafer prior to the ion implantation step with 4×1016 /cm-2,160KeV, H2+ ions. The as-implanted wafer was contained a hydrogen-rich buried layer which depth from the top surface is less than 100 nm. Before this as-implanted wafer being bonded with a handle wafer, the polysilicon layer was removed by a wet etching method. A nanothick silicon layer was then successfully transferred onto a handle wafer under 10-minute microwave irradiation after the bonding step. The thickness of the final transferred silicon layer was 100 nm measured by transmission electron microscopy (TEM).

原文???core.languages.en_GB???
主出版物標題Nanomanufacturing
發行者Materials Research Society
頁面84-89
頁數6
ISBN(列印)1558998780, 9781558998780
DOIs
出版狀態已出版 - 2006
事件2006 MRS Spring Meeting - San Francisco, CA, United States
持續時間: 17 4月 200621 4月 2006

出版系列

名字Materials Research Society Symposium Proceedings
921
ISSN(列印)0272-9172

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???event.eventtypes.event.conference???2006 MRS Spring Meeting
國家/地區United States
城市San Francisco, CA
期間17/04/0621/04/06

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