Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

Yung Chen Cheng, En Chiang Lin, Cheng Ming Wu, C. C. Yang, Jer Ren Yang, Andreas Rosenauer, Kung Jen Ma, Shih Chen Shi, L. C. Chen, Chang Chi Pan, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

56 引文 斯高帕斯(Scopus)

摘要

The carrier localization and nanostructures behaviors of green-luminescence GaN/InGaN quantum-well (QW) structures of various silicon-doping conditions are discussed. The results of photoluminescence (PL), strain state analysis (SSA), detection-energy-dependent photoluminescence excitation (DEDPLE) and excitation-energy-dependent photoluminescence (EEDPL) of three InGaN/GaN QW samples are compared. The SSA images show weaker composition fluctuations in the undoped and well-doped samples and strongly clustering nanostructures in the barrier-doped sample. As a result of the differences in carrier localization, differences in silicon doping between the samples give rise to the differences in EEDPL and DEDPLE spectra.

原文???core.languages.en_GB???
頁(從 - 到)2506-2508
頁數3
期刊Applied Physics Letters
84
發行號14
DOIs
出版狀態已出版 - 5 4月 2004

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