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Nanoscale layer transfer by hydrogen ion-cut processing: A brief review through recent U.S. patents
Benjamin T.H. Lee
機械工程學系
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引文 斯高帕斯(Scopus)
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Keyphrases
Layer Transfer
100%
US Patents
100%
Hydrogen Ion
100%
Ion-cutting
100%
Nanoscale Layers
100%
Sub-100 Nm
60%
Transfer Techniques
60%
Silicon Membrane
60%
Well-defined
40%
Cut Layer
40%
Electronic Devices
20%
Artificial Intelligence
20%
High Dose
20%
Insulator
20%
Materials Technology
20%
Integrated Circuits
20%
Ion Implantation
20%
Wafer Bonding
20%
Microelectronics
20%
Photonic Devices
20%
Industry 4.0 (I4.0)
20%
Silicon Layer
20%
Unique Characteristics
20%
Thinning Process
20%
Specific Intent
20%
Plasma Diffusion
20%
Transfer Technology
20%
FDSOI
20%
Layer Splitting
20%
Material Analysis
20%
Nanometre
20%
Smart-cut
20%
Plasma Immersion Ion Implantation
20%
Hydrogen Trapping Site
20%
Chemical Mechanical Polishing
20%
Thick Silicon
20%
Hydrogen Implantation
20%
Semiconductor Nanomembranes
20%
Peer-reviewed Articles
20%
Implantation Energy
20%
Ultrathin Silicon
20%
Functional Electronics
20%
Ultra-precision
20%
Plasma Electrolytic Oxidation
20%
Semiconductor Membranes
20%
Engineering
Nanoscale
100%
Energy Engineering
20%
Ion Implantation
20%
Nanometre
20%
Wafer Bonding
20%
Review Paper
20%
Microelectronics
20%
Material Technology
20%
Silicon Layer
20%
Thinning Process
20%
Photonic Devices
20%
Chemical Mechanical Polishing
20%
Implantation Site
20%
Integrated Circuit
20%
Artificial Intelligence
20%
Material Science
Silicon
100%
Electronic Circuit
20%
Optical Device
20%
Ion Implantation
20%
Chemical Mechanical Planarization
20%
Materials Engineering
20%