Nanomeshed Pt(Au) transparent contact to p-GaN of light-emitting diode

Xu Feng Li, Cheng Chieh Chang, Yen Shuo Liu, Po Han Chen, Cheng Yi Liu

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

This study examines nanomeshed Pt and Pt(Au) thin films formed by a dewetting process on a p-GaN surface. With prolonged annealing, the Pt(Au) layer shows more stable contact resistance to p-GaN and lower sheet resistance than the Pt layer. L-I curves show that the GaN light-emitting diode (LED) with the Pt(Au) transparent conducting layer (TCL) produces more light output power than the GaN LED with the Pt TCL. The higher light output of the LED with the Pt(Au) TCL is attributed to the lower sheet resistance, which improves current spreading in the active region.

原文???core.languages.en_GB???
頁(從 - 到)166-169
頁數4
期刊Journal of Electronic Materials
43
發行號1
DOIs
出版狀態已出版 - 1月 2014

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