Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures

Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, C. C. Yang, Ming Hua Mao, Yen Sheng Lin, Kung Jeng Ma, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

43 引文 斯高帕斯(Scopus)

摘要

Based on wavelength-dependent and temperature-varying time-resolved photoluminescence (PL) measurements, the mechanism of carrier transport among different levels of localized states (spatially distributed) in an InGaN/GaN quantum well structure was proposed for interpreting the early-stage fast decay, delayed slow rise, and extended slow decay of PL intensity. The process of carrier transport was enhanced with a certain amount of thermal energy for overcoming potential barriers between spatially distributed potential minimums. With carrier supply in the carrier transport process, the extended PL decay time at wavelengths corresponding to deeply localized states can be as large as 80 ns.

原文???core.languages.en_GB???
頁(從 - 到)4375-4377
頁數3
期刊Applied Physics Letters
80
發行號23
DOIs
出版狀態已出版 - 10 6月 2002

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