Multi-peak negative differential resistance arising from tunneling current through few germanium quantum dots

W. T. Lai, G. H. Chen, David M.T. Kuo, P. W. Li

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Metal-oxide-silicon (MOS) capacitors incorporating 2 ∼ 3 germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated to exhibit multi-peak negative differential resistance (NDR) for multiple-value memories and logics. The tunneling current through the Ge-QD MOS capacitors is theoretically and experimentally studied. We found that negative differential resistance (NDR) arises from the interdot Coulomb interactions and the QDs with shell-filling conditions. The experimental results qualitatively match with theoretical prediction.

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主出版物標題IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs
出版狀態已出版 - 2008
事件IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States
持續時間: 15 6月 200816 6月 2008

出版系列

名字IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

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???event.eventtypes.event.conference???IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
國家/地區United States
城市Honolulu, HI
期間15/06/0816/06/08

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