Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering

H. C. Chen, C. M. Huang, K. F. Liao, S. W. Lee, C. H. Hsu, L. J. Chen

研究成果: 雜誌貢獻會議論文同行評審

7 引文 斯高帕斯(Scopus)


The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar+ ion energy and density has been investigated. Under low (300 eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650 eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.

頁(從 - 到)465-469
期刊Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
出版狀態已出版 - 8月 2005
事件Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 -
持續時間: 25 10月 200427 10月 2004


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