Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering

H. C. Chen; C. M. Huang; K. F. Liao; S. W. Lee; C. H. Hsu; L. J. Chen

doi:10.1016/j.nimb.2005.05.019

Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering

H. C. Chen, C. M. Huang, K. F. Liao, S. W. Lee, C. H. Hsu, L. J. Chen

材料科學與工程研究所

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar⁺ ion energy and density has been investigated. Under low (300 eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650 eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.

原文	???core.languages.en_GB???
頁（從 - 到）	465-469
頁數	5
期刊	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
卷	237
發行號	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.05.019
出版狀態	已出版 - 8月 2005
事件	Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - 持續時間: 25 10月 2004 → 27 10月 2004

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10.1016/j.nimb.2005.05.019

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title = "Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering",

abstract = "The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar+ ion energy and density has been investigated. Under low (300 eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650 eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.",

keywords = "Ion sputtering, Quantum dots, Silicon",

author = "Chen, {H. C.} and Huang, {C. M.} and Liao, {K. F.} and Lee, {S. W.} and Hsu, {C. H.} and Chen, {L. J.}",

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TY - JOUR

T1 - Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering

AU - Chen, H. C.

AU - Huang, C. M.

AU - Liao, K. F.

AU - Lee, S. W.

AU - Hsu, C. H.

AU - Chen, L. J.

PY - 2005/8

Y1 - 2005/8

N2 - The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar+ ion energy and density has been investigated. Under low (300 eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650 eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.

AB - The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar+ ion energy and density has been investigated. Under low (300 eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650 eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.

KW - Ion sputtering

KW - Quantum dots

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=23444452924&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.05.019

DO - 10.1016/j.nimb.2005.05.019

M3 - 會議論文

AN - SCOPUS:23444452924

SN - 0168-583X

VL - 237

SP - 465

EP - 469

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

T2 - Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004

Y2 - 25 October 2004 through 27 October 2004

ER -

Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering

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