Monolithic 2-μm/0.5-μm GaAs HBT-HEMT (BiHEMT) process for low phase noise voltage controlled oscillators (VCOs)

Cheng Han Lu, Chi Hsien Lin, Yen Han Liao, Hong Yeh Chang, Yu Chi Wang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

4 引文 斯高帕斯(Scopus)

摘要

This paper describes a 2.4-GHz single-ended and a 6-GHz differential voltage-controlled oscillators (VCOs) using a monolithic stacked 2-μm InGaP/GaAs heterojunction bipolar transistor (HBT) and 0.5-μm AlGaAs/GaAs pseudomorphic high-electron mobility transistor (PHEMT) (BiHEMT) process. The BiHEMT process features high integration, low noise, and high frequency performance, and also it provides great design flexibility to achieve good circuit performance. To demonstrate the property of this BiHEMT technology, two VCOs based on common-base/emitter configurations are presented. The 2.4-GHz VCO has a tuning range of 430 MHz with a bandwidth of 17.9% and a phase noise of -122 dBc/Hz at 1-MHz offset. The 6-GHz VCO has a tuning range of 470 MHz and a phase noise of -107.7 dBc/Hz at 1-MHz offset. The chip sizes of the two VCOs are both 1×1 mm2.

原文???core.languages.en_GB???
主出版物標題2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
頁面1235-1237
頁數3
DOIs
出版狀態已出版 - 2012
事件2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
持續時間: 4 12月 20127 12月 2012

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

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???event.eventtypes.event.conference???2012 Asia-Pacific Microwave Conference, APMC 2012
國家/地區Taiwan
城市Kaohsiung
期間4/12/127/12/12

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