Molecular beam epitaxial growth of GaAs and other compound semiconductors

K. Adomi, J. I. Chyi, S. F. Fang, T. C. Shen, S. Strite, H. Morkoç

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

We describe recent progress in the field of molecular beam epitaxial growth of GaAs and other compound semiconductors with some attention given to the application of these materials to device technology. Our review is centered around structures grown on GaAs substrates but attention is also given to GaAs grown on silicon substrates and to InGaAsInAlAsImP heterostructures grown on InP substrates. The growth and properties of state-of-the-art GaAsAlAs, GaAsGe and InGaAsInAlAsInP heterostructures are detailed. In the sections devoted to the lattice-mismatched heteroepitaxial GaAs on silicon and InSb on GaAs systems more attention is paid to the crucial growth techniques necessary to obtain high quality material while device performance is also included.

原文???core.languages.en_GB???
頁(從 - 到)182-212
頁數31
期刊Thin Solid Films
205
發行號2
DOIs
出版狀態已出版 - 1 12月 1991

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