Molecular beam epitaxial growth and characterization of InSb on Si

J. I. Chyi, D. Biswas, S. V. Iyer, N. S. Kumar, H. Morkoç, R. Bean, K. Zanio, H. Y. Lee, Haydn Chen

研究成果: 雜誌貢獻期刊論文同行評審

75 引文 斯高帕斯(Scopus)

摘要

Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm 2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10 16 and 2.7×1016 cm-3. A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm2/V s with carrier concentrations of about 2.0×10 16 cm-3. A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.

原文???core.languages.en_GB???
頁(從 - 到)1016-1018
頁數3
期刊Applied Physics Letters
54
發行號11
DOIs
出版狀態已出版 - 1989

指紋

深入研究「Molecular beam epitaxial growth and characterization of InSb on Si」主題。共同形成了獨特的指紋。

引用此