Modulation of photoemission spectra of In 2O 3 nanowires by the variation in Zn doping level

C. L. Hsin; J. H. He; L. J. Chen

doi:10.1063/1.2172219

Modulation of photoemission spectra of In ₂O ₃ nanowires by the variation in Zn doping level

C. L. Hsin, J. H. He, L. J. Chen

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研究成果: 雜誌貢獻 › 回顧評介論文 › 同行評審

42 引文斯高帕斯（Scopus）

摘要

The growth of In2 O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2 O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

原文	???core.languages.en_GB???
文章編號	063111
期刊	Applied Physics Letters
卷	88
發行號	6
DOIs	https://doi.org/10.1063/1.2172219
出版狀態	已出版 - 2月 2006

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10.1063/1.2172219

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title = "Modulation of photoemission spectra of In 2O 3 nanowires by the variation in Zn doping level",

abstract = "The growth of In2 O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2 O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.",

author = "Hsin, {C. L.} and He, {J. H.} and Chen, {L. J.}",

note = "Funding Information: The research is supported by the Republic of China National Science Council Grant No. NSC 94-2115-E-007-018 and Ministry of Education Grant No. 91-E-FA04-1-4.",

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AU - Hsin, C. L.

AU - He, J. H.

AU - Chen, L. J.

N1 - Funding Information: The research is supported by the Republic of China National Science Council Grant No. NSC 94-2115-E-007-018 and Ministry of Education Grant No. 91-E-FA04-1-4.

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N2 - The growth of In2 O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2 O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

AB - The growth of In2 O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2 O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

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M3 - 回顧評介論文

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SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

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Modulation of photoemission spectra of In 2O 3 nanowires by the variation in Zn doping level

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Modulation of photoemission spectra of In ₂O ₃ nanowires by the variation in Zn doping level