Minority-carrier lifetime in AlxGa1- xAs grown by molecular-beam epitaxy

R. K. Ahrenkiel, B. M. Keyes, T. C. Shen, J. I. Chyi, H. Morkoc

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

AlxGa1-xAs (x>0.30) double heterostructures are grown by molecular-beam epitaxy (MBE) and the minority-carrier lifetimes are measured by time-resolved photoluminescence. The data indicate that the minority-carrier lifetimes in high aluminum (x>0.30) AlxGa 1-xAs grown by MBE are comparable to the previously published lifetimes of material grown by liquid-phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority-carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.

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頁(從 - 到)3094-3096
頁數3
期刊Journal of Applied Physics
69
發行號5
DOIs
出版狀態已出版 - 1991

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