In this study, aluminum nitride (AlN) thin films were deposited on Si (100) and investigated on the minimum film residual stress with varying two critical deposition conditions in N2 gas flow and power. The pulsed DC reactive sputtering of aluminum targets was carried out in gas ratio of nitrogen (N2) and argon (Ar) plasma with N2:Ar ratios from 15:15 to 60:15 and power from 400 to 1000 W. According to the large-scale data of in situ optical emission spectroscopy (OES) study in connection with film microstructure information by analyzing X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) micrographs, transmission electron microscope (TEM) analyses, Fourier-transform infrared spectroscopy (FTIR) spectra, and alpha-step profilers, the deposited film stress states can be highly affected by the critical processing parameters of N2 flow rate and power. In addition, the proposed value of residual stress (VRS) can be calculated by PC1-DEV (the standard deviation in the first principal component direction) method for accurate prediction of the stress states of deposited films, i.e., compressive stress or tensile stress, which will provide valuable information on residual stress characterization as the in situ monitoring tool for the AlN thin film deposition process. In summary, a methodology based on large data of OES by which principal component analysis (PCA) was utilized to reduce its dimension can be used to determine residual stress characterization from a simple measurement in situ plasma monitoring tool is suggested.
|頁（從 - 到）||1975-1990|
|期刊||International Journal of Advanced Manufacturing Technology|
|出版狀態||已出版 - 6月 2021|