Microstructure studies of InGaN/GaN multiple quantum wells

Yen Sheng Lin, Chen Hsu, Kung Jeng Ma, Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, Chih Wei Liu, C. C. Yang, Jen Inn Chyi

研究成果: 會議貢獻類型會議論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

The effects of nominal indium content on compositional fluctuation and structure defects in InGaN/GaN multiple quantum well (QW) structures were reported. The samples were grown in a metallorganic chemical vapor deposition (MOCVD) reactor and consisted of five or ten periods of Si-doped InGaN wells with 3-nm thickness. Material microanalyses of the quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.

原文???core.languages.en_GB???
頁面II218-II219
出版狀態已出版 - 2001
事件4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
持續時間: 15 7月 200119 7月 2001

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???event.eventtypes.event.conference???4th Pacific Rim Conference on Lasers and Electro-Optics
國家/地區Japan
城市Chiba
期間15/07/0119/07/01

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