Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy

J. Y. Chen, G. C. Chi, P. J. Huang, M. Y. Chen, S. C. Hung, C. H. Nien, M. C. Chen, S. M. Lan, B. J. Pong, C. J. Pan, C. J. Tun, F. Ren, C. Y. Chang, S. J. Pearton

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

InN quantum dots (QDs) were grown over 2 in. Si (1 1 1) wafers with a 300 nm thick AlN buffer layer by atmospheric-pressure metal organic vapor phase epitaxy. When the growth temperature increased from 450 to 625 °C, the corresponding InN QDs height increased from 16 to 108 nm while the density of the InN QDs decreased from 1.6× 109 cm-2 to 3.3× 108 cm-2. Transmission electron microscopy showed the presence of a 2 nm thick wetting layer between the AlN buffer layer and InN QDs. The growth mechanism was determined to be the Stranski-Krastanov mode. The presence of misfit dislocations in the QDs indicated that residual strain was introduced during InN QDs formation. From x-ray diffraction analysis, when the height of the InN QDs increased from 16 to 62 nm, the residual strain in InN QDs reduced from 0.45% to 0.22%. The residual strain remained at 0.22% for larger heights most likely due to plastic relaxation in the QDs. The critical height of the InN QDs for releasing the strain was determined to be 62 nm.

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文章編號162103
期刊Applied Physics Letters
92
發行號16
DOIs
出版狀態已出版 - 2008

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