Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors

Keyphrases

• Microstructure Properties 100%
• Optical Properties 100%
• Electrical Properties 100%
• Si(111) 100%
• Schottky Barrier 100%
• PtSi 100%
• Infrared Detector 100%
• Film Thickness 37%
• Barrier Height 25%
• Quantum Efficiency 25%
• Schottky Barrier Detector 25%
• High Efficiency 12%
• Microstructure 12%
• Grain Size 12%
• Growth Conditions 12%
• Diffraction Pattern 12%
• High Responsivity 12%
• Optical Performance 12%
• Negligible Effects 12%
• Large Grain Size 12%
• Nanometre 12%
• Electron Diffraction Pattern 12%
• Optimal Film Thickness 12%

Material Science

• Film 100%
• Optical Property 100%
• Schottky Barrier 100%
• Film Thickness 66%
• Grain Size 33%
• Diffraction Pattern 33%
• Electron Diffraction 16%

Engineering

• Schottky Barrier 100%
• Quantum Efficiency 66%
• Barrier Height 66%
• Growth Condition 33%
• Nanometre 33%
• Responsivity 33%
• Optical Performance 33%
• Negligible Effect 33%
• Electron Diffraction 33%