MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Keyphrases

• Enhancement-mode (E-mode) 100%
• P-GaN 100%
• MOSFET 100%
• Power Consumption 33%
• Molecular Beam Epitaxy 33%
• GaN-based 33%
• Maximum Transconductance 33%
• Drain-source Voltage 33%
• High Current Gain 33%
• Transistor Device 33%
• Low Leakage Current 33%
• Current Gain Cutoff Frequency 33%
• Breakdown Characteristics 33%
• Metal-oxide-semiconductor Transistor 33%
• Gate Oxide 33%
• Current Consumption 33%
• Enhanced Mode 33%
• Low Leakage Power 33%
• GaAs MOSFET 33%

Material Science

• Magnesium Oxide 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxide Compound 25%
• Transistor 25%
• Gallium Arsenide 25%
• Metal Oxide 25%
• Oxide Semiconductor 25%
• Molecular Beam Epitaxy 25%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Electric Power Utilization 25%
• Gallium Arsenide 25%
• Current Gain 25%
• Cutoff Frequency 25%
• Source Voltage 25%
• Metal Oxide Semiconductor 25%
• Gate Oxide 25%