MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Y. Irokawa; Y. Nakano; M. Ishiko; T. Kachi; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi

doi:10.1063/1.1704876

MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Y. Irokawa, Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

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摘要

The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm ^-1 for GaAs MOSFETs.

原文	???core.languages.en_GB???
頁（從 - 到）	2919-2921
頁數	3
期刊	Applied Physics Letters
卷	84
發行號	15
DOIs	https://doi.org/10.1063/1.1704876
出版狀態	已出版 - 12 4月 2004

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10.1063/1.1704876

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abstract = "The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.",

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AU - Irokawa, Y.

AU - Nakano, Y.

AU - Ishiko, M.

AU - Kachi, T.

AU - Kim, J.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

PY - 2004/4/12

Y1 - 2004/4/12

N2 - The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.

AB - The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.

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MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

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