@inproceedings{79a4671122a5424a96c6e40e5a09b2a6,
title = "Mextram modeling of Si/SiGe heterojunction phototransistors",
abstract = "To integrate the phototransistor into the receiver circuit for optical communication, not only the compatible process is pre-requisite [1], but also the device model is required for circuit simulation. The designed nkT base current (depletion region recombination current at B-E junction) can increase the bandwidth of the phototransistor and provide a possible bias margin for avalanche gain. Therefore, a modified Mextram model is proposed for the HPT simulation.",
author = "F. Yuan and Z. Pei and Shi, {J. W.} and Chang, {S. T.} and Liu, {C. W.}",
year = "2003",
doi = "10.1109/ISDRS.2003.1272011",
language = "???core.languages.en_GB???",
series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "92--93",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",
}