MEXTRAM modeling of Si-SiGe HPTs

Feng Yuan; Jin Wei Shi; Zingway Pei; Chee Wee Liu

doi:10.1109/TED.2004.829622

MEXTRAM modeling of Si-SiGe HPTs

Feng Yuan, Jin Wei Shi, Zingway Pei, Chee Wee Liu

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

14 引文斯高帕斯（Scopus）

摘要

The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the "early voltage reduction" under constant illumination are well modeled in a modified model. The base recombination current (nkT current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation.

原文	???core.languages.en_GB???
頁（從 - 到）	870-876
頁數	7
期刊	IEEE Transactions on Electron Devices
卷	51
發行號	6
DOIs	https://doi.org/10.1109/TED.2004.829622
出版狀態	已出版 - 6月 2004

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10.1109/TED.2004.829622

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title = "MEXTRAM modeling of Si-SiGe HPTs",

abstract = "The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the {"}early voltage reduction{"} under constant illumination are well modeled in a modified model. The base recombination current (nkT current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation.",

keywords = "Heterojunction phototransistor (HPT), MEXTRAM, Photodetector, SiGe, nkT recombination current",

author = "Feng Yuan and Shi, {Jin Wei} and Zingway Pei and Liu, {Chee Wee}",

note = "Funding Information: Manuscript received July 14, 2003; revised March 23, 2004. This work was supported by the National Science Council of Taiwan, R.O.C. under Grants NSC 91-2120-M-002-002 and 92-2120-E-002-006. The review of this paper was arranged by Editor L. Lunardi.",

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AU - Yuan, Feng

AU - Shi, Jin Wei

AU - Pei, Zingway

AU - Liu, Chee Wee

N1 - Funding Information: Manuscript received July 14, 2003; revised March 23, 2004. This work was supported by the National Science Council of Taiwan, R.O.C. under Grants NSC 91-2120-M-002-002 and 92-2120-E-002-006. The review of this paper was arranged by Editor L. Lunardi.

PY - 2004/6

Y1 - 2004/6

N2 - The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the "early voltage reduction" under constant illumination are well modeled in a modified model. The base recombination current (nkT current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation.

AB - The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the "early voltage reduction" under constant illumination are well modeled in a modified model. The base recombination current (nkT current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation.

KW - Heterojunction phototransistor (HPT)

KW - MEXTRAM

KW - Photodetector

KW - SiGe

KW - nkT recombination current

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DO - 10.1109/TED.2004.829622

M3 - 期刊論文

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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MEXTRAM modeling of Si-SiGe HPTs

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