Low-temperature-grown GaAs (LTG-GaAs) based photodetectors (PDs) draw significant attention due to their ultrahigh electrical bandwidth performances. A review is given of the advantages and applications of LTG-GaAs based metal-semiconductor-metal traveling wave photodetectors (MSMTWPDs). The ultra-high speed and record high power-bandwidth product performances in both short (∼800nm) and long (∼1300nm) wavelength regimes are discussed.
|頁（從 - 到）||445-446|
|期刊||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|出版狀態||已出版 - 2002|
|事件||2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, United Kingdom|
持續時間: 10 11月 2002 → 14 11月 2002