@inproceedings{82236ec41f4b452592ecd7a9de5028e4,
title = "Metal-oxide-HEMT On 6.1{\AA} antimonides",
abstract = "We successfully demonstrated DC and RF performance of a metal-oxide-HEMT based on baseline InAs/AlSb HEMT epitaxy material. E-beam evaporated Al 1-xOx was chosen for the dielectric film and its composition characterized by EDS. In a device with 2.0μm gate length, maximum drain current is 286mA/mm and peak transconductance is 495mS/mm at drain voltage of 0.4V. Microwave performance shows a fT of 10 GHz and an fmax of 20 GHz. Degraded subthreshold slope but suppressed gate leakage specifically at large electric field were observed.",
keywords = "InAs/AlSb, Metal-oxide-HEMT",
author = "Fan, {Da Wei} and Lin, {Yu Chao} and Lin, {Heng Kuang} and Chiu, {Pei Chin} and Chen, {Shu Han} and Chyi, {Jen Inn} and Ko, {Chih Hsin} and Kuan, {Ta Ming} and Hsieh, {Meng Kuei} and Lee, {Wen Chin} and Wann, {Clement H.}",
year = "2009",
doi = "10.1109/ICIPRM.2009.5012508",
language = "???core.languages.en_GB???",
isbn = "9781424434336",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "326--329",
booktitle = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009",
note = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 ; Conference date: 10-05-2009 Through 14-05-2009",
}