Both ion implantation and silicidation have become standard processing steps in the fabrication of ULSI devices. As the device dimensions scale down to deep submicron region, it is essential to understand the interactions of metal contacts with highly doped shallow junctions. In this paper, issues in metal contacts on shallow junctions such as formation of sulicides, growth of epitaxial suicides, stability of suicides as well as the removal of projected range and end of range defects are highlighted. Recent developments in the investigation of the formation of TiSi2 on shallow junctions formed with N+ implantation are presented.
|頁（從 - 到）||231-236|
|期刊||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版狀態||已出版 - 1月 1997|