Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots

Yu An Liao; Yi Kai Chao; Shu Wei Chang; Wen Hao Chang; Jen Inn Chyi; Shih Yen Lin

doi:10.1063/1.4824067

Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots

Yu An Liao, Yi Kai Chao, Shu Wei Chang, Wen Hao Chang, Jen Inn Chyi, Shih Yen Lin

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications.

原文	???core.languages.en_GB???
文章編號	143502
期刊	Applied Physics Letters
卷	103
發行號	14
DOIs	https://doi.org/10.1063/1.4824067
出版狀態	已出版 - 30 9月 2013

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10.1063/1.4824067

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title = "Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots",

abstract = "We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications.",

author = "Liao, \{Yu An\} and Chao, \{Yi Kai\} and Chang, \{Shu Wei\} and Chang, \{Wen Hao\} and Chyi, \{Jen Inn\} and Lin, \{Shih Yen\}",

note = "Funding Information: This work was supported in part by the National Science Council, Taiwan, under Grant Number NSC 102-2221-E-001-032-MY3 and Nano-project granted by Academia Sinica.",

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T1 - Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots

AU - Liao, Yu An

AU - Chao, Yi Kai

AU - Chang, Shu Wei

AU - Chang, Wen Hao

AU - Chyi, Jen Inn

AU - Lin, Shih Yen

N1 - Funding Information: This work was supported in part by the National Science Council, Taiwan, under Grant Number NSC 102-2221-E-001-032-MY3 and Nano-project granted by Academia Sinica.

PY - 2013/9/30

Y1 - 2013/9/30

N2 - We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications.

AB - We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications.

UR - https://www.scopus.com/pages/publications/84885579803

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DO - 10.1063/1.4824067

M3 - 期刊論文

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JO - Applied Physics Letters

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Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots

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