Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots

Yu An Liao, Yi Kai Chao, Shu Wei Chang, Wen Hao Chang, Jen Inn Chyi, Shih Yen Lin

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications.

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文章編號143502
期刊Applied Physics Letters
103
發行號14
DOIs
出版狀態已出版 - 30 9月 2013

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