摘要
We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications.
原文 | ???core.languages.en_GB??? |
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文章編號 | 143502 |
期刊 | Applied Physics Letters |
卷 | 103 |
發行號 | 14 |
DOIs | |
出版狀態 | 已出版 - 30 9月 2013 |