Mechanism underlying damage induced in gallium nitride epilayer during laser lift-off process

Ko Tao Lee, Yeeu Chang Lee, Sheng Han Tu, Ching Liang Lin, Po Hen Chen, Cheng Yi Liu, Jeng Yang Chang

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

A vertical-type gallium nitride blue light-emitting diode on silicon was prepared by using a laser lift-off process. A grid like surface was obtained after the laser lift-off process. The central part of the grid preserves a uniform surface morphology, but damage occurred and a crack was formed on the peripheral area of a grid. Though a comparison of the crystalline and optical properties of the central and peripheral areas, the high thermal gradient of the peripheral area under pulse laser shot irradiation was found to play an important role during the laser lift-off process.

原文???core.languages.en_GB???
頁(從 - 到)930-932
頁數3
期刊Japanese Journal of Applied Physics
47
發行號2 PART 1
DOIs
出版狀態已出版 - 15 2月 2008

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