TY - JOUR
T1 - Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package
AU - Yang, C. T.
AU - Liu, W. C.
AU - Liu, C. Y.
N1 - Funding Information:
The authors would like to thank Prof. Chung, NCU, Taiwan for the fruitful discussion. Also, the work was financially supported by the National Science Council (NSC), Taiwan (NSC 100-3113-E-008-001-).
PY - 2012/5
Y1 - 2012/5
N2 - The thermal resistance of the first-level Cu dissipation substrate (R Cu) with different Cu thickness is investigated in this work. Using the "constant-forward-voltage" method, the thermal resistances of the first-level Cu dissipation substrates (R Cu) were measured against different Cu thickness. In the initial increase in the Cu thickness (up to 0.6 mm), R Cu decreases with the Cu thickness. As the Cu thickness over 0.6 mm, R Cu starts to slightly increase with the Cu thickness. The thermal resistance (R Cu) of the Cu substrate is composed of the z-direction thermal resistance (R z) and the two-dimensional horizontal spreading resistance (R s). The initial decrease in R Cu should attribute to the decrease in R s with the Cu thickness. After the initial increase in R Cu, the R Cu would increase and be dominated by the R z increase with the Cu thickness. Intriguingly, a minimum R Cu value occurs at the Cu thickness of about 0.6 mm. Also, in this paper, we discuss the possible inaccuracy factors of the "constant-forward-voltage" method.
AB - The thermal resistance of the first-level Cu dissipation substrate (R Cu) with different Cu thickness is investigated in this work. Using the "constant-forward-voltage" method, the thermal resistances of the first-level Cu dissipation substrates (R Cu) were measured against different Cu thickness. In the initial increase in the Cu thickness (up to 0.6 mm), R Cu decreases with the Cu thickness. As the Cu thickness over 0.6 mm, R Cu starts to slightly increase with the Cu thickness. The thermal resistance (R Cu) of the Cu substrate is composed of the z-direction thermal resistance (R z) and the two-dimensional horizontal spreading resistance (R s). The initial decrease in R Cu should attribute to the decrease in R s with the Cu thickness. After the initial increase in R Cu, the R Cu would increase and be dominated by the R z increase with the Cu thickness. Intriguingly, a minimum R Cu value occurs at the Cu thickness of about 0.6 mm. Also, in this paper, we discuss the possible inaccuracy factors of the "constant-forward-voltage" method.
UR - http://www.scopus.com/inward/record.url?scp=84860354238&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2011.05.002
DO - 10.1016/j.microrel.2011.05.002
M3 - 期刊論文
AN - SCOPUS:84860354238
SN - 0026-2714
VL - 52
SP - 855
EP - 860
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 5
ER -