Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots

J. E. Chang, P. H. Liao, C. Y. Chien, J. C. Hsu, M. T. Hung, H. T. Chang, S. W. Lee, W. Y. Chen, T. M. Hsu, Tom George, P. W. Li

研究成果: 雜誌貢獻期刊論文同行評審

30 引文 斯高帕斯(Scopus)

摘要

The influence of SiO 2 and Si 3N 4 dielectric matrices on the structural, phonon, luminescence and thermal properties of Ge quantum dots (QDs) has been experimentally investigated. Compared with the case of QDs in SiO 2 layers, Si 3N 4 matrix imposes large interfacial surface energy on QDs and enhances their Ostwald ripening rate, appearing to be conducive for an improvement in crystallinity and a morphology change to a more perfectly spherical shape of Ge QDs. Quantum confinement induced electronic structure modulation for Ge QDs is observed to be strongly influenced not only by the QD size but also by the embedded matrix. Both matrix and surface effects offer additional mechanisms to QD itself for controlling the optical and thermal properties of the QDs.

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文章編號105303
期刊Journal of Physics D: Applied Physics
45
發行號10
DOIs
出版狀態已出版 - 14 3月 2012

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