MAGNETRON-ENHANCED PLASMA ETCHING OF SILICON & SILICON DIOXIDE.

David C. Hinson, I. Lin, Walter H. Class, Steven Hurwitt

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

A new plasma regime and technique for high rate, low energy anisotropic etching of Si and SiO//2 has been developed. This regime allows the best features of older RIE and high pressure planar plasma etchers to be incorporated in a single system.

原文???core.languages.en_GB???
頁(從 - 到)103-107
頁數5
期刊Semiconductor International
6
發行號10
出版狀態已出版 - 1983

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