Magnetic Field Resonance and Pressure Effects on Epitaxial Thin Film Deposition and In Situ Plasma Diagnostics

C. R. Yang; C. H. Yeh; L. C. Hu; T. C. Wei; C. C. Lee; J. Y. Chang; T. T. Li

doi:10.1007/s11090-017-9853-3

Magnetic Field Resonance and Pressure Effects on Epitaxial Thin Film Deposition and In Situ Plasma Diagnostics

C. R. Yang, C. H. Yeh, L. C. Hu, T. C. Wei, C. C. Lee, J. Y. Chang, T. T. Li

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This study demonstrated the use of quadrupole mass spectrometry and optical emission spectrometry in diagnosing the plasma in the electron cyclotron resonance chemical vapor deposition (ECRCVD) process. The effects of adjusting the main magnetic coil current and process pressure on chemical composition of the plasma and the characteristics of the epitaxial thin film in the ECRCVD system were investigated. When the main magnetic coil current increased, the deposition rate of thin film increased, with no major effect on thin film crystallization. However, when the process pressure was higher, both the deposition rate and crystallization of epitaxial thin film increased.

原文	???core.languages.en_GB???
頁（從 - 到）	247-259
頁數	13
期刊	Plasma Chemistry and Plasma Processing
卷	38
發行號	1
DOIs	https://doi.org/10.1007/s11090-017-9853-3
出版狀態	已出版 - 1 1月 2018

存取文件

10.1007/s11090-017-9853-3

引用此

@article{4cf67c5fd7e14fd2b611b25d10dcfb00,

title = "Magnetic Field Resonance and Pressure Effects on Epitaxial Thin Film Deposition and In Situ Plasma Diagnostics",

abstract = "This study demonstrated the use of quadrupole mass spectrometry and optical emission spectrometry in diagnosing the plasma in the electron cyclotron resonance chemical vapor deposition (ECRCVD) process. The effects of adjusting the main magnetic coil current and process pressure on chemical composition of the plasma and the characteristics of the epitaxial thin film in the ECRCVD system were investigated. When the main magnetic coil current increased, the deposition rate of thin film increased, with no major effect on thin film crystallization. However, when the process pressure was higher, both the deposition rate and crystallization of epitaxial thin film increased.",

keywords = "ECRCVD, OES, PECVD, QMS, Thin film",

author = "Yang, {C. R.} and Yeh, {C. H.} and Hu, {L. C.} and Wei, {T. C.} and Lee, {C. C.} and Chang, {J. Y.} and Li, {T. T.}",

note = "Publisher Copyright: {\textcopyright} 2017, Springer Science+Business Media, LLC.",

year = "2018",

month = jan,

day = "1",

doi = "10.1007/s11090-017-9853-3",

language = "???core.languages.en_GB???",

volume = "38",

pages = "247--259",

journal = "Plasma Chemistry and Plasma Processing",

issn = "0272-4324",

number = "1",

}

TY - JOUR

T1 - Magnetic Field Resonance and Pressure Effects on Epitaxial Thin Film Deposition and In Situ Plasma Diagnostics

AU - Yang, C. R.

AU - Yeh, C. H.

AU - Hu, L. C.

AU - Wei, T. C.

AU - Lee, C. C.

AU - Chang, J. Y.

AU - Li, T. T.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - This study demonstrated the use of quadrupole mass spectrometry and optical emission spectrometry in diagnosing the plasma in the electron cyclotron resonance chemical vapor deposition (ECRCVD) process. The effects of adjusting the main magnetic coil current and process pressure on chemical composition of the plasma and the characteristics of the epitaxial thin film in the ECRCVD system were investigated. When the main magnetic coil current increased, the deposition rate of thin film increased, with no major effect on thin film crystallization. However, when the process pressure was higher, both the deposition rate and crystallization of epitaxial thin film increased.

AB - This study demonstrated the use of quadrupole mass spectrometry and optical emission spectrometry in diagnosing the plasma in the electron cyclotron resonance chemical vapor deposition (ECRCVD) process. The effects of adjusting the main magnetic coil current and process pressure on chemical composition of the plasma and the characteristics of the epitaxial thin film in the ECRCVD system were investigated. When the main magnetic coil current increased, the deposition rate of thin film increased, with no major effect on thin film crystallization. However, when the process pressure was higher, both the deposition rate and crystallization of epitaxial thin film increased.

KW - ECRCVD

KW - OES

KW - PECVD

KW - QMS

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=85031907529&partnerID=8YFLogxK

U2 - 10.1007/s11090-017-9853-3

DO - 10.1007/s11090-017-9853-3

M3 - 期刊論文

AN - SCOPUS:85031907529

SN - 0272-4324

VL - 38

SP - 247

EP - 259

JO - Plasma Chemistry and Plasma Processing

JF - Plasma Chemistry and Plasma Processing

IS - 1

ER -

Magnetic Field Resonance and Pressure Effects on Epitaxial Thin Film Deposition and In Situ Plasma Diagnostics

摘要

存取文件

指紋

引用此