@article{0e6dc382072b45e3a4ebffc147090e8a,
title = "Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes",
abstract = "Measurements were conducted to investigate the electroluminescence efficiency of 400 nm ultraviolet (UV) light emitting diodes (LED) with five In0.06Ga0.94N/GaN quantum wells. Injection current-dependent characteristics were analyzed under dc and pulsed mode operations to study the dominant factors affecting the luminescence efficiency of UV LEDs. The analysis of injection current-dependent characteristics showed that carrier overflow was the dominant factor that affects the external quantum efficiency of UV LEDs. The results show that increase in the number of quantum wells is necessary for the improvement in the carrier overflow.",
author = "Pan, \{Chang Chi\} and Lee, \{Chia Ming\} and Liu, \{Jia Wen\} and Chen, \{Guan Ting\} and Chyi, \{Jen Inn\}",
note = "Funding Information: The authors would like to thank I.-L. Chen for her assistance in chip processing and material characterization and the technical support of the Optical Sciences Center of National Central University. This work was partially supported by TEKCORE Co., the National Science Council of R.O.C. under Contract Number NSC 91-2215-E-008-014, and the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities.",
year = "2004",
month = jun,
day = "21",
doi = "10.1063/1.1765207",
language = "???core.languages.en\_GB???",
volume = "84",
pages = "5249--5251",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "25",
}