Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application

Cheng Ta Yu, Chih Chun Shen, Han Chieh Ho, Hong Yeh Chang, Jia Shiang Fu, Heng Kuang Lin

研究成果: 書貢獻/報告類型會議論文篇章同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole double-throw (SPDT) broadband switch application. The measured 3-dB bandwidth of the proposed SPDT switch is from dc to 30 GHz. The switch features an insertion loss of less than 4 dB, and an isolation of greater than 18 dB between 10 MHz and 30 GHz. The measured input 1 dB compression point (P1dB) and third-order intercept point (IP3) at 100 MHz are 12.5 and 27 dBm, respectively. The chip size of the proposed switch is 0.75 × 0.58 mm2. These results demonstrate the outstanding potential of ABCS HEMT technology for low voltage switch applications.

原文???core.languages.en_GB???
主出版物標題2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
頁面196-198
頁數3
DOIs
出版狀態已出版 - 2012
事件2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
持續時間: 4 12月 20127 12月 2012

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

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???event.eventtypes.event.conference???2012 Asia-Pacific Microwave Conference, APMC 2012
國家/地區Taiwan
城市Kaohsiung
期間4/12/127/12/12

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