@article{a4aa6d77c06b43399d534c397b564897,
title = "Low turn-on voltage and high-current InP/In0.37 Ga0.63As0.89Sb0.11/In0.53 Ga0.47As double heterojunction bipolar transistors",
abstract = "We report on the dc and microwave characteristics of an nP/In0.37Ga0.63As0.89Sb0.11/ In0.53Ga0.47As double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic InP/In0.37Ga0.63As0.89 Sb0.11 base reduces the conduction band offset δ Ec at the emitter/base junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm2. A current gain of 125 and a peak fT of 238 GHz have been obtained on the devices with an emitter size of 1 × 10 μm2M, suggesting that a high collector average velocity and a high current capability are achieved due to the type-II lineup at the InGaAsSb/InGaAs base/collector junction.",
keywords = "Heterojunction bipolar transistors (HBTs), InGaAsSb, InP, Type-II",
author = "Chen, {Shu Han} and Teng, {Kuo Hung} and Chen, {Hsin Yuan} and Wang, {Sheng Yu} and Chyi, {Jen Inn}",
note = "Funding Information: Manuscript received February 26, 2008; revised April 1, 2008. This letter was supported in part by the Ministry of Economic Affairs under Contract 94-EC-17-A-07-S1-0001 and in part by the National Science Council of Taiwan, R.O.C., under Contract NSC-95-2215-E-008-153. The review of this letter was arranged by Editor Y. Taur.",
year = "2008",
month = jul,
doi = "10.1109/LED.2008.923207",
language = "???core.languages.en_GB???",
volume = "29",
pages = "655--657",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "7",
}