摘要
Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.
原文 | ???core.languages.en_GB??? |
---|---|
文章編號 | 285 |
頁(從 - 到) | 1-5 |
頁數 | 5 |
期刊 | Nanoscale Research Letters |
卷 | 8 |
發行號 | 1 |
DOIs | |
出版狀態 | 已出版 - 2013 |