Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition

Shih Hao Chan, Sheng Hui Chen, Wei Ting Lin, Meng Chi Li, Yung Chang Lin, Chien Cheng Kuo

研究成果: 雜誌貢獻期刊論文同行評審

67 引文 斯高帕斯(Scopus)

摘要

Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.

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文章編號285
頁(從 - 到)1-5
頁數5
期刊Nanoscale Research Letters
8
發行號1
DOIs
出版狀態已出版 - 2013

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