Low temperature Si layer splitting

Q. Y. Tong, T. H. Lee, L. J. Huang, Y. L. Chao, U. Gosele

研究成果: 會議貢獻類型會議論文同行評審

5 引文 斯高帕斯(Scopus)


A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B+ atoms, a second implant of H2+ ions were employed. Some Si wafers were implanted by H2+ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.

出版狀態已出版 - 1997
事件Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA
持續時間: 6 10月 19979 10月 1997


???event.eventtypes.event.conference???Proceedings of the 1997 IEEE International SOI Conference
城市Fish Camp, CA, USA


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