Low temperature Si layer splitting

Q. Y. Tong; T. H. Lee; L. J. Huang; Y. L. Chao; U. Gosele

Low temperature Si layer splitting

Q. Y. Tong, T. H. Lee, L. J. Huang, Y. L. Chao, U. Gosele

機械工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B⁺ atoms, a second implant of H₂⁺ ions were employed. Some Si wafers were implanted by H₂⁺ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.

原文	???core.languages.en_GB???
頁面	126-127
頁數	2
出版狀態	已出版 - 1997
事件	Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA 持續時間: 6 10月 1997 → 9 10月 1997

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???event.eventtypes.event.conference???	Proceedings of the 1997 IEEE International SOI Conference
城市	Fish Camp, CA, USA
期間	6/10/97 → 9/10/97

引用此

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title = "Low temperature Si layer splitting",

abstract = "A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B+ atoms, a second implant of H2+ ions were employed. Some Si wafers were implanted by H2+ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.",

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TY - CONF

T1 - Low temperature Si layer splitting

AU - Tong, Q. Y.

AU - Lee, T. H.

AU - Huang, L. J.

AU - Chao, Y. L.

AU - Gosele, U.

PY - 1997

Y1 - 1997

N2 - A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B+ atoms, a second implant of H2+ ions were employed. Some Si wafers were implanted by H2+ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.

AB - A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B+ atoms, a second implant of H2+ ions were employed. Some Si wafers were implanted by H2+ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0031383723&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0031383723

SP - 126

EP - 127

T2 - Proceedings of the 1997 IEEE International SOI Conference

Y2 - 6 October 1997 through 9 October 1997

ER -

Low temperature Si layer splitting

摘要

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指紋

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